GaN Power devices - Physics of GaN devices
Lecture given by Dr. Giorgia Longobardi (Cambridge - UK). Exchange program supported by the Erasmus+ agreement between the University of Napoli federico II and the University of Cambrige. Summary of the talk and a discussion on the advantage of the GaN material and devices. Direct links to the sections are: Summary and introduction - • GaN Power devices - Summary and Introduction Physics - • GaN Power devices - Physics of GaN devices Gan devices - • GaN Power devices - the HEMT Failure mechanisms - • GaN Power devices - Failure mechanisms Normally OFF devices - • GaN Power devices - Normally OFF devices Commercial devices (2015) and comparison with other WBG - • GaN Power devices - Commerciallly availabl...

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GaN Power devices - the HEMT

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Spintronics memories devices, how are information stored?

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What is GaN (Gallium Nitride)? Power Integrations Explains GaN Technology - Part 1

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Gallium Nitride Technology for Future Ultraviolet Light Emitting, Detecting and Electronic Devices

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Lecture 1(a): ASM-HEMT Model

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The Professor Who Taught People How To Think (1962)

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Session 1: Silicon Carbide (SiC) vs GaN vs Silicon

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Everything is Better: GaN vs Silicon Power Supplies

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The Gallium Nitride Revolutions

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Semiconductors explained in 16 mins | Chris Miller

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Lecture 10: Compound Semiconductor Materials Science (HEMTs and Poisson-Schrodinger Solvers)

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Schottky Junction and Ohmic Contacts

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Thyristors Did to Power What Transistors Did to Logic

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Reliability of GaN-power transistors: an overview - G. Meneghesso (Part 1 of 2)

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GaN layout tips for an efficient design

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Lec DB 30 AlGaN/GaN HEMT: device basics, current collapse & passivation.

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Gallium Nitride Power MMICs – Fact and Fiction

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Future of Semiconductors: Silicon Carbide & Gallium Nitride as Next-Gen Semiconductors

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Power Electronics WK3_2 MOSFET Turn On Characteristics

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