MOS transistor theory | VLSI DESIGN | SNS Institutions

A Metal-Oxide-Semiconductor (MOS) transistor is a semiconductor device widely used in integrated circuits for switching and amplification. It consists of four terminals: gate, source, drain, and substrate (body). The gate is insulated from the semiconductor channel by a thin oxide layer. When a voltage is applied to the gate, an electric field controls the flow of charge carriers between the source and drain. MOS transistors operate mainly in cutoff, triode, and saturation regions. They are classified as NMOS and PMOS devices. Their low power consumption, high switching speed, and scalability make them essential in modern VLSI systems. #snsinstitutions #snsdesignthinkers #designthinking