Драйвер для MOSFET и IGBT | Принцип выбора и расчет | Часть 1

This article discusses the purpose and application features of drivers for MOSFET and IGBT transistors. The first part briefly examines the operating principle of a transistor switch controlled by pulse-width modulation (PWM). It also highlights the differences between an ideal transistor and a real one, as well as the causes of power losses during turn-on and turn-off, for both MOSFET and IGBT transistors. The primary power losses in transistors occur during turn-on and turn-off. The higher the switching frequency of a semiconductor device, the higher the losses, the greater the heating, and the lower the circuit efficiency. Power is also dissipated in the on-state of the switch due to the voltage drop. As the power of MOSFT and IGBT transistors increases, the on-state voltage drop increases, resulting in greater power loss. #MOSFET #IGBT #driver #electronicsclub