Quantifying Band Bending

This technical guide explains how to quantify band bending in semiconductors by measuring changes in electrostatic potential or energy levels near surfaces and junctions. Rather than observing curved bands directly, researchers use experimental methods such as capacitance-voltage (C-V) measurements, X-ray photoelectron spectroscopy (XPS), and Kelvin probe techniques to infer these shifts. These tools allow scientists to calculate the surface potential or built-in voltage, which are then converted into energy values to describe the extent of the bending. The video emphasizes that each method relies on specific physical assumptions and that one must carefully distinguish between true electrostatic shifts and artifacts like chemical changes or surface contamination.