EuMW 20 - Modeling of High-Power RF Transistors and Applications
Mitra Gilasgar, Principle Design Engineer at Ampleon, introduces a modeling flow used to model high-power RF transistors. Mitra starts with power amplifier basics, an introduction to LDMOS technology and why we need transistor models. Mitra then proceeds to explain the measurements required for model extraction, including fundamental and harmonic load pull. Mitra goes on to discuss modeling parasitics, packaging and bond wires. Finally, Mitra discusses model fitting and modeling transistor ruggedness.

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IMS 20 - Measuring S-Parameters with Uncertainties

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#181: Power Amplifier Concept

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EEVblog 1752 - Texas Instruments SCREWED UP the NE5532!

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(Part 1) How to Design, Build, and Test an RF Linear Amplifier (Overview)

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The Load-Modulated Balanced Amplifier

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Every Component of a Switch Mode Power Supply Explained

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2x LDMOS Box - Air Cooled MRFX1K80H

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Understanding VSWR and Return Loss

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TSP #82 - Tutorial on High-Power Balanced & Doherty Microwave Amplifiers

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FORTRAN: STILL DESTROYING MODERN LANGUAGES

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Fundamentals of RF and mm Wave Power Amplifier Designs: Prof. Hua Wang

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LDMOS

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Understanding Load Pull

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RF GaN Device Models and Extraction Techniques

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Designing GaN PA MMICs

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Elettronika MIZAR300 - How to Replace the Final Transistor

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RF Amplifier Bias Networks: What Could Go Wrong?

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