MOSFET Short-Channel Effects | Vth | Leakage | Punch-through | DIBL | Hot carrier injection issues

In this video, we explore how MOSFET scaling improves speed and density but also introduces short-channel effects (SCEs) that challenge device reliability. When the channel length shrinks to dimensions comparable to depletion regions, the gate loses control, leading to effects such as: • Threshold voltage reduction • Subthreshold leakage • Punch-through • Drain-Induced Barrier Lowering (DIBL) • Hot carrier injection and reliability issues We will discuss the physical origins, implications, and impact of short-channel effects in modern device design. 🔗 Watch our other related videos: • Fab Process →    • IC  Fab |  Wafer Processing | Masking | Ph...   • Multi-Gate MOSFETs | Non-Conventional Tech Nodes & ITRS →    • Multi Gate | MOSFETs | Non  conventional |...   • Clean Room Protocols →    • Clean Room | classification | Semiconducto...   • Multi-Gate & Moore’s Law (ITRS) →    • Multi Gate | MOSFETs | Non  conventional |...   • CMOS & NMOS Process Technology →    • CMOS vs NMOS Process Technology |Microelec...   👉 Don’t forget to Subscribe to the channel for more videos on VLSI, MOSFET technology, and Semiconductor Design!