SiC FETs: Easily Driving Higher Power Density

Join the webinar to discover how the pursuit for lower RDS(on) in SiC FET devices (wide bandgap) is helping power designers successfully deliver next-generation performance and innovation through higher efficiency, lower losses, smaller form factors and reduced total cost versus silicon MOSFETs and other silicon carbide MOSFETs. Agenda: Introducing new UF3SC SiC FETs – RDS(on) less than 10mΩ The cascode technology “secret sauce” New design possibilities EV inverter Fast battery charging Solar inverter Circuit protection Design support/content